DocumentCode
516765
Title
CMOS/SIMOX-RF-Frontend for 1.7GHz
Author
Eggert, D. ; Budde, W.
Author_Institution
Fraunhofer-Institute of Microelectronic Circuits and Systems, IMS-2 Dresden, Grenzstr. 28; D-01109 Dresden
fYear
1996
fDate
17-19 Sept. 1996
Firstpage
208
Lastpage
211
Abstract
The cointegration of high-speed NMOS devices and inductive elements by means of a SIMOX-technology with high-resistive substrates enables operating frequencies which meet the needs of modern communication systems. This paper describes a RF frontend operating in the frequency range 1.4 to 1.9GHz. The performance of the presented circuit proves the capability of this technology to realize complete RF-systems on a single chip.
Keywords
CMOS technology; Capacitors; Circuits; Dielectric substrates; Dielectric thin films; Impedance matching; Inductors; Radio frequency; Silicon on insulator technology; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location
Neuchatel, Switzerland
Print_ISBN
2-86332-197-8
Type
conf
Filename
5468628
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