DocumentCode
516808
Title
A High Speed Wide Band SRAM Macro using Complementary Half-Swing Bus Architecture
Author
Nakase, Yasunobu ; Kondo, Harufusa ; Iwabu, Atsushi ; Mashiko, Koichiro ; Sumi, Tadashi
Author_Institution
System LSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara Itami 664, Japan
fYear
1996
fDate
17-19 Sept. 1996
Firstpage
384
Lastpage
387
Abstract
A complementary half swing architecture is proposed for the high speed and low power bus operation. The bus is composed from a pair of lines. Each bus line within a pair utilizes the upper or lower half of the supply voltage exclusively. The architecture is applied to an embedded SRAM of the 0.5¿m CMOS ATM switch LSI. Simulation results indicate that it operates beyond 200MHz at the supply voltage of 3.0V. The worst case power dissipation is reduced by half and the peak current is reduced by 66%.
Keywords
Asynchronous transfer mode; Circuit simulation; Driver circuits; Large scale integration; Operational amplifiers; Power engineering and energy; Random access memory; Switches; Voltage; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location
Neuchatel, Switzerland
Print_ISBN
2-86332-197-8
Type
conf
Filename
5468672
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