• DocumentCode
    516808
  • Title

    A High Speed Wide Band SRAM Macro using Complementary Half-Swing Bus Architecture

  • Author

    Nakase, Yasunobu ; Kondo, Harufusa ; Iwabu, Atsushi ; Mashiko, Koichiro ; Sumi, Tadashi

  • Author_Institution
    System LSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara Itami 664, Japan
  • fYear
    1996
  • fDate
    17-19 Sept. 1996
  • Firstpage
    384
  • Lastpage
    387
  • Abstract
    A complementary half swing architecture is proposed for the high speed and low power bus operation. The bus is composed from a pair of lines. Each bus line within a pair utilizes the upper or lower half of the supply voltage exclusively. The architecture is applied to an embedded SRAM of the 0.5¿m CMOS ATM switch LSI. Simulation results indicate that it operates beyond 200MHz at the supply voltage of 3.0V. The worst case power dissipation is reduced by half and the peak current is reduced by 66%.
  • Keywords
    Asynchronous transfer mode; Circuit simulation; Driver circuits; Large scale integration; Operational amplifiers; Power engineering and energy; Random access memory; Switches; Voltage; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
  • Conference_Location
    Neuchatel, Switzerland
  • Print_ISBN
    2-86332-197-8
  • Type

    conf

  • Filename
    5468672