Title :
High-Voltage DIMOS Driver Circuit
Author :
Pomper, M. ; Leipold, L. ; Tihanyi, J. ; Longo, H.-E.
Author_Institution :
Siemens AG, Research Laboratories and Components Group, Munich, W.-Germany
Abstract :
High-voltage output driver circuits realized with double implanted MOS (DIMOS) transistors are presented. Breakdown voltages exceed 100V. Dynamic bootstrap techniques resulted in circuits combining low power (5mW) and fast switching times (150ns) at typical operating conditions of 50V, 5OpF and 16kHz.
Keywords :
Breakdown voltage; CMOS logic circuits; Costs; Driver circuits; Laboratories; Logic circuits; MOSFETs; Switched capacitor circuits; Switches; Transconductance;
Conference_Titel :
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location :
Southampton, UK
Print_ISBN :
0-85296-208-8
