Title :
MOS Voltage Reference based on Polysilicon Gate Work Function Difference
Author :
Oguey, H.J. ; Gerber, B.
Author_Institution :
Centre Electronique Horloger S.A., Neuchâtel, Switzerland
Keywords :
CMOS technology; Doping; Flexible printed circuits; Implants; MOSFETs; Photonic band gap; Silicon; Statistics; Temperature dependence; Voltage;
Conference_Titel :
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location :
Southampton, UK
Print_ISBN :
0-85296-208-8
