DocumentCode
516981
Title
High-Density Linear CCD-Imagers
Author
Herbst, Heiner ; Deppe, Hans-Raimund
Author_Institution
Res. Labs., SIEMENS AG, Munich, Germany
fYear
1978
fDate
18-21 Sept. 1978
Firstpage
152
Lastpage
154
Abstract
A quadrilinear CCD-imager with a pitch of 7 μm is described. By modifying the sensor element design an anti-blooming device is readily incorporated. It was tested using a 14 μm pitch bilinear CCD-imager.
Keywords
CCD image sensors; antiblooming device; high density linear CCD imager; pitch bilinear CCD imager; quadrilinear CCD imager; sensor element design; size 7 mum; Charge carriers; Charge-coupled image sensors; Electrodes; MOS capacitors; Optical crosstalk; Optical sensors; Optical surface waves; Photodiodes; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location
Amsterdam
Type
conf
Filename
5469014
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