• DocumentCode
    516985
  • Title

    A Low-Voltage CMOS Bandgap Reference

  • Author

    Vittoz, E. ; Neyroud, O.

  • Author_Institution
    Centre Electron. Horloger, Neuchatel, Switzerland
  • fYear
    1978
  • fDate
    18-21 Sept. 1978
  • Firstpage
    139
  • Lastpage
    141
  • Abstract
    The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V. Variations of less than 3 mV over more than 100oC have been obtained on a few samples and are certainly within reach for each circuit with an adjustment. The temperature range can be further extended by improving the design.
  • Keywords
    CMOS integrated circuits; MOSFET; low-power electronics; CMOS technology; MOS transistor; bandgap reference; low-voltage CMOS bandgap reference; weak inversion; well-controlled exponential Id(Vs) characteristic; Bipolar transistors; CMOS technology; Circuit testing; Detectors; Low voltage; MOSFETs; Photonic band gap; Resistors; Strips; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
  • Conference_Location
    Amsterdam
  • Type

    conf

  • Filename
    5469018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516985