Title :
A Comparison of High Speed I2L Structures
Author :
Blackstone, S. ; Mertens, R.P.
Author_Institution :
Dept. Electron., Catholic Univ. of Leuven, Heverlee, Belgium
Abstract :
A comparison is made between SCTL, low downward beta I2L and conventional I2L. All were fabricated on a single chip for a direct comparison. The results of both measured and predicted ring oscillators and divide by twos show the SCTL superior.
Keywords :
logic circuits; oscillators; SCTL; Schottky coupled transistor logic; high speed I2L structures; low downward beta I2L; ring oscillators; single chip; Cathodes; Current measurement; Implants; Instruments; Isolation technology; Logic; Ring oscillators; Schottky diodes; Semiconductor device measurement; Space technology;
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam