Title :
GaAs Integrated Circuits for High Speed Logic
Author :
Boccon-Gibod, D. ; Durand, G.
Author_Institution :
Labs. D´´Electron. Et De Phys. Appl., Limeil-Brevannes, France
Abstract :
An evaluation of the performances of logical gates with GaAs MESFET´s in the Gb/s range is made on the basis of computational and experimental results.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect logic circuits; gallium arsenide; high-speed integrated circuits; logic gates; GaAs; MESFET; high speed logic integrated circuit; logical gates; Gallium arsenide; High speed integrated circuits; Integrated circuit interconnections; Logic circuits; Logic functions; MESFET integrated circuits; Performance evaluation; Propagation delay; Resistors; Schottky diodes;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
