DocumentCode
517043
Title
Circuit Implications of the P.S.D.-MOST Process
Author
Spaanenburg, Ir L.
Author_Institution
Dept. of Electr. Eng., Twente Univ. of Technol., Enschede, Netherlands
fYear
1976
fDate
21-24 Sept. 1976
Firstpage
72
Lastpage
73
Abstract
The P.S.D.-MOST process will be compared to the polysilicon-gate process. It is shown, that P.S.D. circuitry occupy slightly less area at a higher switching speed.
Keywords
MOSFET; PSD circuitry; PSD-MOST process; circuit implications; polysilicon source-and-drain MOST process; polysilicon-gate process; switching speed; Capacitance; Integrated circuit interconnections; Standards development; Switching circuits; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location
Toulouse
Type
conf
Filename
5469086
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