Title :
A New Method for the Determination of Transfer Inefficiency in MOS Charge Coupled Devices
Author :
Meusemann, B. ; Froeschle, E.
Author_Institution :
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Aachen, Germany
Abstract :
In order to measure the charge transfer inefficiency of very short MOS-Charge Coupled Devices a new method has been developed which makes it possible to shift the analog signal up and down within the device. This method gives also the possibility to investigate local inhomogeneites which may appear at crystal defects or overlaps if mask-composing techniques are used.
Keywords :
MIS devices; charge-coupled devices; MOS charge coupled devices; analog signal; crystal defects; local inhomogeneites; mask-composing techniques; transfer inefficiency; Charge coupled devices; Charge measurement; Charge transfer; Charge-coupled image sensors; Current measurement; Dark current; Delay; Signal detection;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
