Recent Developments in Non-Volatile Semiconductor Memories

This paper discusses the developments in the technology and circuit concepts of Electrically Erasable Programmable Read Only Memories which might lead to a new generation of self-modifiable non-volatile parts for use in intelligent controllers and self-adaptive systems. The two available memory approaches, the Floating gate device and the MNOS device are compared and the new achievements in both approaches which are making the parts more intelligent and simple to use are presented.