DocumentCode
517060
Title
Recent Developments in Non-Volatile Semiconductor Memories
Author
Maes, Herman E.
Author_Institution
Katholieke Universiteit Leuven, ESAT Laboratory, Kardinaal Mercierlaan 94, B-3030 Heverlee - Belgium
fYear
1983
fDate
21-23 Sept. 1983
Firstpage
1
Lastpage
6
Abstract
This paper discusses the developments in the technology and circuit concepts of Electrically Erasable Programmable Read Only Memories which might lead to a new generation of self-modifiable non-volatile parts for use in intelligent controllers and self-adaptive systems. The two available memory approaches, the Floating gate device and the MNOS device are compared and the new achievements in both approaches which are making the parts more intelligent and simple to use are presented.
Keywords
Automatic programming; Circuits; Control systems; Dielectric substrates; EPROM; Functional programming; Nonvolatile memory; PROM; Semiconductor memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1983. ESSCIRC '83. Ninth European
Conference_Location
Lausanne, Switzerland
Print_ISBN
2-88074-021-5
Type
conf
Filename
5469106
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