Title :
High Density Monolithic Bipolar and MOS Crosspoint Arrays for Private Branch Telephone Exchanges
Author :
Bächle, E. ; Clauss, H. ; Dangel, J. ; Kohlbacher, G. ; Schluter, K. ; Schübler, K. ; Wulf, H.-J.
Author_Institution :
Forschungsinst., AEG-TELEFUNKEN, Ulm, Germany
Abstract :
The introduction of an N-channel silicon-gate process and an I2L process has significantly improved existing monolithic semiconductor crosspoint arrays with respect to the ON resistance, the OFF attenuation, and the required chip area.
Keywords :
MOSFET; integrated injection logic; private telephone exchanges; I2L process; MOS crosspoint arrays; N-channel silicon-gate process; high density monolithic bipolar arrays; monolithic semiconductor crosspoint arrays; off attenuation; on resistance; private branch telephone exchanges; Attenuation; Circuit testing; Electrical resistance measurement; Integrated circuit measurements; Integrated circuit technology; MOSFET circuits; Semiconductor device measurement; Size control; Switches; Telephony;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
