Abstract :
If GaAs MESFET\´s are the basic devices for GaAs IC\´s,it is also discussed that the possibility to make all other types of devices on a semi-insulating substrate, and also the possibility to use an "ideal" heterojunction with large gap material. In addition GaAs offers some specific properties : Gunn effect, luminescence and acoustoelectric effects and can imagine circuits with unusual characteristics, for instance an optical coupling between chips or parts of a chip for the interconnexions.
Keywords :
Gunn devices; III-V semiconductors; Schottky gate field effect transistors; acoustoelectric devices; gallium arsenide; monolithic integrated circuits; semiconductor heterojunctions; GaAs; GaAs IC; GaAs MESFET; Gunn effect; acoustoelectric effect; ideal heterojunction; large gap material; luminescence effect; optical coupling; semiinsulating substrate; FETs; Gallium arsenide; Gunn devices; Logic circuits; Logic devices; MESFETs; Microwave devices; Power supplies; Silicon; Substrates;
