Title :
GaInP/GaAs HBT Laser Driver Circuit
Author :
Menouni, M. ; Desrousseaux, P. ; Launay, P. ; Martin, D. ; Driad, R. ; Dangla, J.
Author_Institution :
FRANCE TELECOM, CNET-PAB, Laboratoire de Bagneux, 196, Avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France. Tel: (33) 1 42 31 79 86, FAX: (33) 1 47 46 04 17
Abstract :
A high performance driver circuit for direct laser modulation has been fabricated with a 50 GHz baseline HBT GaInP/GaAs technology. It can operate at bit rate up to 16 Gbit/s with a 40 mA modulation current and 800 mW power dissipation. We also show that correctly sizing transistor area is a key factor for obtaining higher bit rate.
Keywords :
Bandwidth; Bit rate; Broadband amplifiers; Current density; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Laser feedback; Power dissipation; Telecommunications;
Conference_Titel :
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location :
Lille, France
Print_ISBN :
2-86332-180-3
