The low power magnetotransistor based on the CMOS technology

This paper presents the low power magnetotransistor detect magnetic field density in vertical direction. The devices can detect magnetic field by Lorentz force act upon minority carrier in base and difference between base and collector current (ΔI_CB) was occurred. The structure of the low power magnetotransistor consist of one emitter, one collector and one base contact and designed decrease emitter injection area was 5 um and growth LOCOS oxide around emitter area. The structure was generated and simulated by TCAD Sentuarus simulation package and shows increase sensitivity of the low power magnetotransistor when compare the three terminals magnetotransistor. From the experiment, the low power magnetotransistor can operate at bias current less than 1 mA and high sensitivity is 20.64 mV/T. The device increase sensitivity 2.53 times at bias current 5 mA and decrease power consumption 85% when compare the three terminals magnetotransistor.