Title :
A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier
Author :
Khan, H.R. ; Wahab, Q. ; Fritzin, J. ; Alvandpour, A.
Author_Institution :
Electron. Eng. Dept., NED Univ. of Eng. & Technol., Karachi, Pakistan
Abstract :
A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 Ω load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.
Keywords :
CMOS integrated circuits; power amplifiers; RF choke; differential class-E CMOS power amplifier; finite dc inductance; frequency 900 MHz; inductive reactance; lattice LC balun; power added efficiency; resonance circuit; series inductor; Differential amplifiers; Impedance matching; Inductance; Inductors; Lattices; Power amplifiers; RLC circuits; Radio frequency; Radiofrequency amplifiers; Resonance; Class E; differential amplifier; finite inductance; lattice LC balun;
Conference_Titel :
Microwave Conference, 2010 German
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-4933-0
Electronic_ISBN :
978-3-9812668-1-8
