DocumentCode
520095
Title
Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells
Author
Sun, Guan ; Tripathy, Suvranta K. ; Ding, Yujie J. ; Liu, Guangyu ; Zhao, Hongping ; Huang, G.S. ; Tansu, Nelson ; Khurgin, Jacob B.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; photoluminescence; quantum wells; radiation quenching; wide band gap semiconductors; GaN-AlN; asymmetric-coupled quantum wells; photoluminescence quenching; relocation of electrons; Charge carrier processes; Electron optics; Energy measurement; Gallium nitride; High speed optical techniques; Laser excitation; Nanostructures; Photoluminescence; Quantum computing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499657
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