DocumentCode
520103
Title
Homogeneous linewidth temperature dependence of interfacial GaAs quantum dots studied with optical 2D Fourier-transform spectroscopy
Author
Karaiskaj, D. ; Moody, G. ; Bristow, A.D. ; Siemens, M.E. ; Dai, X. ; Bracker, A.S. ; Gammon, D. ; Cundiff, S.T.
Author_Institution
Nat. Inst. of Stand. & Technol., Univ. of Colorado, Boulder, CO, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Optical 2D Fourier-transform spectroscopy extracts the temperature-dependent homogeneous lineshape of an ensemble of interfacial quantum dots. The asymmetric lineshape reveals that confinement and excitation-induced dephasing compete with strong exciton-phonon interactions, which dominate at higher temperature.
Keywords
Fourier transform spectroscopy; III-V semiconductors; gallium arsenide; phonon-exciton interactions; quantum dots; spectral line breadth; thermo-optical effects; GaAs; asymmetric lineshape; excitation induced dephasing; exciton-phonon interaction; homogeneous linewidth temperature dependence; interfacial quantum dot; optical 2D Fourier transform spectroscopy; Gallium arsenide; Quantum dots; Spectroscopy; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499665
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