DocumentCode
520138
Title
Temperature-dependent coupling of GaAs quantum well and interfacial quantum dots studied with optical 2D fourier-transform spectroscopy
Author
Moody, G. ; Siemens, M.E. ; Bristow, A.D. ; Dai, X. ; Bracker, A.S. ; Gammon, D. ; Cundiff, S.T.
Author_Institution
Nat. Inst. of Stand. & Technol., Univ. of Colorado, Boulder, CO, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Optical 2D Fourier-transform spectra reveal time and temperature dependent relaxation from GaAs quantum well states into the interfacial quantum dot ensemble. We attribute the increased rate of relaxation at higher temperature to stimulated phonon emission.
Keywords
Fourier transform spectra; III-V semiconductors; gallium arsenide; semiconductor quantum dots; semiconductor quantum wells; stimulated emission; GaAs; interfacial quantum; optical 2D Fourier-transform spectroscopy; quantum well states; stimulated phonon emission; temperature dependent relaxation; temperature-dependent coupling; Excitons; Gallium arsenide; Lattices; Nonlinear optics; Optical coupling; Optical mixing; Phonons; Quantum dots; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499701
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