• DocumentCode
    520335
  • Title

    Electrically pumped photonic crystal nanocavities using a laterally doped p-i-n junction

  • Author

    Ellis, Bryan ; Sarmiento, Tomas ; Mayer, Marie ; Stone, Peter ; Beeman, Jeff ; Zhang, Bingyang ; Dubon, Oscar ; Haller, Eugene ; Yamamoto, Yoshihisa ; Harris, James ; Vuckovic, Jelena

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ion implantation doping is used to define a laterally doped p-i-n junction to electrically pump a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Cavity coupled electroluminescence is demonstrated.
  • Keywords
    Biomembranes; Doping; Gold; High speed optical techniques; Optical interconnections; Optical modulation; Optical pumping; PIN photodiodes; Photonic crystals; Power system interconnection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520335