• DocumentCode
    520374
  • Title

    Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

  • Author

    Kuramochi, Eiichi ; Tanabe, Takasumi ; Taniyama, Hideaki ; Kawasaki, Kohei ; Notomi, Masaya

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
  • Keywords
    Finite difference methods; Integrated optics; Microscopy; Nanophotonics; Optical devices; Optical resonators; Photonic crystals; Resonance; Silicon on insulator technology; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520374