• DocumentCode
    520547
  • Title

    InGaAs QW nanopillar light emitting diodes monolithically grown on a Si substrate

  • Author

    Chuang, Linus C. ; Chen, Roger ; Sedgwick, Forrest ; Ko, Wai Son ; Ng, Kar Wei ; Tran, Thai-Truong D. ; Chang-Hasnain, Connie

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Room-temperature operation of InGaAs/GaAs QW nanopillar light emitting diodes grown on a (111) Si substrate by low temperature MOCVD (400°C) and fabricated using conventional lithography and processing techniques are reported for the first time.
  • Keywords
    Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Laser excitation; Light emitting diodes; Lithography; MOCVD; Neural networks; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520547