DocumentCode
52073
Title
AWARE (Asymmetric Write Architecture With REdundant Blocks): A High Write Speed STT-MRAM Cache Architecture
Author
Kon-Woo Kwon ; Choday, Sri Harsha ; Yusung Kim ; Roy, Kaushik
Author_Institution
Electr. & Comput. Eng. Dept., Purdue Univ., West Lafayette, IN, USA
Volume
22
Issue
4
fYear
2014
fDate
Apr-14
Firstpage
712
Lastpage
720
Abstract
Spin-transfer torque magnetic RAM (STT-MRAM) is a promising memory technology for lower level caches because of its high density and nonvolatile nature. However, the high write latency is a bottleneck to its widespread adoption as the future on-chip memory. In this paper, we propose a new cache architecture-asymmetric write architecture with redundant blocks (AWARE)-that can improve the write latency by taking advantage of the asymmetric write characteristics of 1T-1MTJ STT-MRAM bit-cells. Due to the nature of the storage element in STT-MRAM, the time required for the two-state transitions ( 1→ 0 and 0→ 1) is not identical. In other words, one of the state transitions is slower than the other direction. In conventional cache architecture, the overall write latency is limited by the slower transition. However, the AWARE cache design introduces redundant blocks in each row, and they are preset to the initial state that enables the faster transition. Hence the write operations performed in these redundant blocks are much faster than the conventional write scheme. The write latency in AWARE is improved by 30% over conventional cache architecture with no area penalty in the data array. Moreover, the additional tag bits introduced in this technique result in penalty on the total cache area. In addition, the write energy increases modestly by 7% in the proposed cache design. However, this write-energy increase can be mitigated by sacrificing the cache capacity.
Keywords
MRAM devices; cache storage; write-once storage; AWARE; STT-MRAM cache architecture; asymmetric write architecture; asymmetric write characteristics; high write speed; redundant blocks; spin-transfer torque magnetic RAM; storage element; write energy; write latency; write operations; Bit transition probability; high speed; redundant blocks; spin-transfer torque magnetic RAM (STT-MRAM); write current asymmetry; write latency;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2013.2256945
Filename
6514685
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