DocumentCode
520894
Title
Si-Ge surface-normal asymmetric Fabry-Perot electroabsorption modulator
Author
Edwards, Elizabeth H. ; Audet, Ross M. ; Claussen, Stephanie A. ; Schaevitz, Rebecca K. ; Tasyürek, Emel ; Ren, Shen ; Dosunmu, Olufemi I. ; Ünlü, M. Selim ; Miller, David A B
Author_Institution
Ginzton Lab., Stanford Univ., Stanford, CA, USA
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
3
Abstract
The strong electroabsorption modulation possible using the quantum-confined Stark effect in Ge/SiGe quantum wells provides the working mechanism for efficient, CMOS-compatible photonic integrated modulators. We describe such a device employing a surface-normal asymmetric Fabry-Perot design.
Keywords
Absorption; Fabry-Perot; Integrated optics; Mirrors; Optical devices; Optical films; Optical modulation; Page description languages; Reflectivity; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA, USA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500497
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