Title :
Mesa-structured InGaAs/InAlAs photoconductive antennas for THz time domain systems operated at 1.5 µm
Author :
Dietz, R.J.B. ; Roehle, H. ; Hensel, H.J. ; Bottcher, J. ; Künzel, H. ; Stanze, D. ; Schell, M. ; Sartorius, B.
Author_Institution :
Fraunhofer-Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
Mesa-structuring of InGaAs/InAlAs photoconductive layers has been employed for improving THz antennas. The developed devices are evaluated in a time domain spectrometer operating at 1.5 μm wavelengths. Order-of-magnitude improvements versus planar antennas are demonstrated.
Keywords :
III-V semiconductors; indium compounds; ion beam assisted deposition; photoconducting devices; photoconducting materials; planar antennas; InGaAs-InAlAs; THz time domain systems; mesa-structured photoconductive antennas; time domain spectrometer; wavelength 1.5 mum; Conductivity; Dark current; Etching; Indium compounds; Indium gallium arsenide; Indium phosphide; Ion beams; Photoconductivity; Planar arrays; Principal component analysis;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
