• DocumentCode
    521065
  • Title

    Large signal analysis of AlGaInAs/InP laser transistor

  • Author

    Shirao, Mizuki ; Nishiyama, Nobuhiko ; Lee, SeungHun ; Arai, Shigehisa

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A large signal analysis of a laser transistor based on AlGaInAs/InP long wavelength material system is carried out. Better eye diagrams over 40-Gbps modulation speed are obtained in laser transistors than that in laser diodes.
  • Keywords
    Damping; Diode lasers; Electron emission; Equations; High speed optical techniques; Indium phosphide; Laser theory; Optical modulation; Semiconductor lasers; Signal analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=521065