DocumentCode :
521474
Title :
Investigation of efficiency droop in blue InGaN/GaN light-emitting diodes with different well widths
Author :
Wang, C.H. ; Chiu, C.H. ; Chen, J.R. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonic, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2010
fDate :
16-21 May 2010
Firstpage :
1
Lastpage :
2
Abstract :
Temperature-dependent electroluminescence efficiency of blue light-emitting diodes with different well widths is investigated. The efficiency droop phenomenon for LEDs at low temperature is dependent with electron overflow and non-uniform hole distribution within MQW region.
Keywords :
Charge carrier processes; Electroluminescence; Electron mobility; Electron optics; Gallium nitride; Light emitting diodes; Quantum well devices; Temperature dependence; Temperature distribution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
Type :
conf
Filename :
5501096
Link To Document :
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