• DocumentCode
    521559
  • Title

    Ultrafast graphene photodetector

  • Author

    Xia, Fengnian ; Mueller, Thomas ; Lin, Yu-Ming ; Avouris, Phaedon

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate ultrafast transistor-based photodetectors made from single- and few-layer graphene. The photoresponse does not degrade for optical intensity modulations up to 40 GHz, and further analysis suggests that the intrinsic bandwidth may exceed 500 GHz.
  • Keywords
    Atomic layer deposition; Degradation; Electron optics; Frequency; Intensity modulation; Optical devices; Optical films; Optical modulation; Photodetectors; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5501247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=521559