Narrow Band Gap InSbN Films Fabricated by Two-Step Ion-Implantation for Long Wavelength Infrared Photodetection

We report InSbN films prepared by two-step nitrogen ion implantation into InSb wafers. It is found that films of over 400 nm with nearly uniform nitrogen distribution can be formed and most of the implanted nitrogen ions can form In-N bonds, resulting in band gap bowing and reduction of carrier concentration. It is also found that such films can detect long wavelength infrared radiation and the absorption peak energies can be controlled by monitoring the implanted nitrogen dose. The measured peak wavelengths are consistent with the band gaps of the alloys calculated using a 10-band kp model.