Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements

Author

Kone, G.A. ; Grandchamp, B. ; Hainaut, C. ; Marc, F. ; Labat, N. ; Zimmer, T. ; Nodjiadjim, V. ; Riet, M. ; Dupuy, J. ; Godin, J. ; Maneux, Cristell

Author_Institution

Bordeaux Univ., Talence, France

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

1068

Lastpage

1074

Abstract

We report on the reliability of InP/InGaAs DHBTs used in very high speed ICs and present the analysis of HBT failure mechanisms after thermal and bias stresses (junction temperature from 87°C to 240°C, collector current density fixed at 400 kA/cm², and collector-emitter voltage from 1.5 to 2.7 V). The physical origins of these failure mechanisms have been investigated using TCAD simulation. It points out the emitter sidewalls, the base-emitter junction periphery, and the emitter access resistance. Through three device generations, the analysis pointed out the successive technological enhancements to reduce the thermal resistance R_TH and subsequently decrease the self-heating, leading to minimizing the impact of failure mechanisms.

Keywords

III-V semiconductors; failure analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; semiconductor device testing; technology CAD (electronics); thermal stresses; very high speed integrated circuits; HBT failure mechanisms; InP-InGaAs; TCAD simulation; base-emitter junction periphery; bias stress; collector current density; collector-emitter voltage; device generations; emitter access resistance; junction temperature; reliability improvement; submicrometer DHBT architecture enhancement; temperature 87 degC to 240 degC; thermal resistance reduction; thermal stress; very high speed IC; voltage 1.5 V to 2.7 V; Aging; Failure analysis; Heterojunction bipolar transistors; Indium phosphide; Junctions; Resistance; Stress; Accelerated aging test; InP HBT; physical simulation TCAD; thermal resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2241067

Filename

6459574