• DocumentCode
    52303
  • Title

    Scaling of Copper Seed Layer Thickness Using Plasma-Enhanced ALD and Optimized Precursors

  • Author

    Jiajun Mao ; Eisenbraun, Eric ; Omarjee, V. ; Korolev, Albert ; Dussarrat, C.

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA
  • Volume
    26
  • Issue
    1
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    17
  • Lastpage
    22
  • Abstract
    Two recently developed precursors, AbaCus and Super AbaCus, are evaluated for use in ultralow temperature copper deposition by plasma enhanced atomic layer deposition. Film adhesion, platability, and process window evaluation demonstrate the strong capability of these precursors to overcome current metallization challenges.
  • Keywords
    adhesion; atomic layer deposition; metallisation; Super AbaCus; copper seed layer thickness; film adhesion; metallization challenges; optimized precursors; plasma enhanced atomic layer deposition; plasma-enhanced ALD; platability; process window evaluation; ultralow temperature copper deposition; Adhesives; Conductivity; Copper; Films; Plasma temperature; Thermal stability; AbaCus; BEOL; copper; plasma enhanced atomic layer deposition (PEALD); super AbaCus;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2012.2220789
  • Filename
    6324453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=52303