• DocumentCode
    52420
  • Title

    High-Power and High-Efficiency 1.3- \\mu\\hbox {m} Superluminescent Diode With Flat-Top and Ultrawide Emiss

  • Author

    Khan, M.Z.M. ; Alhashim, H.H. ; Ng, T.K. ; Ooi, B.S.

  • Author_Institution
    Comput., Electr. & Math. Sci. & Eng. (CEMSE) Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
  • Volume
    7
  • Issue
    1
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.
  • Keywords
    III-V semiconductors; antireflection coatings; electron-hole recombination; gallium arsenide; indium compounds; quantum well devices; ridge waveguides; superluminescent diodes; InGaAsP-InP; antireflection coated device configuration; average power spectral density; electron-heavy-hole recombination; electron-light-hole recombination; excited state; flat-top emission bandwidth; ground state; high-efficiency superluminescent diode; high-power superluminescent diode; inherent inhomogeneity; multiple quantum-well superluminescent diode; simultaneous emission; tilted ridge-waveguide device configuration; total output power; ultrawide emission bandwidth; wall-plug efficiency; wavelength 1.3 mum; Bandwidth; Biomedical optical imaging; Current measurement; Quantum well devices; Stimulated emission; Superluminescent diodes; Temperature measurement; Multiple Quantum-wells; Multiple quantum-wells; broadband emission; high-power; inhomogeneous broadening; superluminescent diode;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2015.2399442
  • Filename
    7031427