ADI-FDTD method for physical simulation of semiconductor devices

This paper describes an alternating-direction implicit finite-difference time-domain method for the two-dimensional time-dependent simulation of semiconductor devices. This approach leads to the significant reduction of the semiconductor simulation time. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional approach. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper.