DocumentCode
525040
Title
Doherty power amplifier and GaN technology
Author
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Piazzon, L.
Author_Institution
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
fYear
2010
fDate
14-16 June 2010
Firstpage
1
Lastpage
4
Abstract
In this paper, the features of GaN HEMT technology and Doherty Power Amplifier architecture will be investigated, as a possible answer for the stringent requirements of the next generation of wireless systems. In particular, the attention will be focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. The discussion of the most important DPA´s design aspects will be done through the presentation of several hybrid prototypes. Experimental results will be also given to support the theoretical aspects.
Keywords
Baseband; Gallium nitride; HEMTs; Impedance; Linearity; Power amplifiers; Power dividers; Power engineering and energy; Predistortion; Prototypes; DPA; GaN; PA; Wireless; component;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location
Vilnius, Lithuania
Print_ISBN
978-1-4244-5288-0
Type
conf
Filename
5540436
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