X-ray Absorption Fine Structure Analysis of Valence State of Ce in Polycrystalline Ce:LuAG Films

Author

Jianjun Xie ; Xiaoxing Zhu ; Lingcong Fan ; Ying Shi ; Qing Ma ; Jian Xu ; Fang Lei

Author_Institution

Dept. of Electron. & Inf. Mater., Shanghai Univ., Shanghai, China

Volume

61

Issue

1

fYear

2014

fDate

Feb. 2014

Firstpage

428

Lastpage

432

Abstract

Ce³⁺ doped lutetium aluminum garnet (Ce:Lu₃Al5₅O₁₂/Ce:LuAG) Polycrystalline scintillation films have been fabricated on silicon (111) substrates by Pechini sol-gel method combined with spin-coating technique. Photoluminescence (PL) spectra and X-ray absorption fine structure (XAFS) analysis were used to characterize the as-prepared films. X-ray absorption near-edge structure (XANES) spectra of the Ce-L₃ edge demonstrated that the Ce ion in Ce:LuAG films synthesized in air exhibited two charge states, +3 and +4 valence respectively. By post annealing in H₂ atmosphere, the relative content of Ce³⁺ ions increased from 46.3% to 80.5% for 1.0 mol%Ce:LuAG films, which corresponded with the enhancement of luminescence intensity of this samples.

Keywords

EXAFS; XANES; aluminium compounds; annealing; cerium; doping profiles; garnets; lutetium compounds; photoluminescence; sol-gel processing; spin coating; thin films; Lu₃Al₅O₁₂:Ce; Pechini sol-gel method; Si; X-ray absorption fine structure spectra; XANES; annealing; charge states; doped lutetium aluminum garnet polycrystalline scintillation films; doping content; photoluminescence; silicon (111) substrates; spin-coating; valence state; Absorption; Annealing; Atmosphere; Crystals; Doping; Ions; Luminescence; Ce:LuAG film; H${_2}$ annealing; XANES; photoluminescence;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2289388

Filename

6704863