0.13μm CMOS/DMOS platform technology with novel 8V/9V LDMOS for low voltage high-frequency DC-DC converters

This paper presents a novel low voltage LDMOS structure with low on-resistance based on 0.13 μm CMOS technology. 8 V/9 V Nch LDMOS have only 0.3 μm gate length when the maximum gate operating voltage is 5 V, while the gate length of 5 V CMOS is 0.6 μm to avoid the short channel effect. The obtained specific on-resistance are 1.8 mΩmm² (8 V Nch LDMOS) and 5.9 mΩmm² (8 V Pch LDMOS) respectively. Furthermore ESD protection structure for 8V LDMOS without any additional mask is also fabricated with large second breakdown trigger current It2 in spite of the same device size.