Investigations of inhomogeneous operation of IGB under Unclamped Inductive Switching condition

Author

Mizuno, Yoshihito ; Tagami, Ryuzo ; Nishiwaki, Katsuhiko

Author_Institution

Electron. Dev. Div. III, Toyota Motor Corp., Toyota, Japan

fYear

2010

fDate

6-10 June 2010

Firstpage

137

Lastpage

140

Abstract

This paper reports the results of a study into inhomogeneous operation of IGBTs under Unclamped Inductive Switching (UIS) conditions. Device simulation clarified that differences in the density of holes supplied from the backside causes inhomogeneous current in IGBTs under UIS conditions. The study also measured the distribution of current within the device. A test IGBT with a variable hole density supplied from the backside was fabricated. This enabled inhomogeneous current phenomena in an IGBT under UIS conditions to be verified by actual measurements.

Keywords

hole density; insulated gate bipolar transistors; IGBT; UIS conditions; device simulation; inhomogeneous operation; unclamped inductive switching condition; variable hole density; Current density; Current distribution; Current measurement; Impact ionization; Induction motors; Insulated gate bipolar transistors; Nonuniform electric fields; Power semiconductor devices; Power semiconductor switches; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5543965