Channel scaling of hybrid GaN MOS-HEMTs

Author

Li, Zhongda ; Chow, T. Paul

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2010

fDate

6-10 June 2010

Firstpage

221

Lastpage

224

Abstract

In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, such as Drain Induced Barrier Lowering (DIBL) and velocity saturation, is quantitatively evaluated. A specific on-resistance of 2.1 mΩ-cm² has been projected for a MOS channel length of 0.38 μm. We also have assessed the impact of high-k gate dielectrics, such as Al₂O₃. In addition, we have found that adding a thin GaN cap layer on top of AlGaN barrier can help reducing DIBL.

Keywords

MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; high-k dielectric thin films; AlGaN; MOS channel length; channel scaling; drain induced barrier lowering; high-k gate dielectrics; hybrid MOS-HEMT; size 0.38 mum; systematic downscaling; velocity saturation; Aluminum gallium nitride; Electron mobility; Gallium nitride; HEMTs; MODFETs; Medical simulation; Numerical simulation; Power semiconductor devices; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5544026