Title :
DB (Dielectric Barrier) IGBT with extreme injection enhancement
Author :
Takei, Manabu ; Fujikake, Shinji ; Nakazawa, Haruo ; Naito, Tatsuya ; Kawashima, Tomoyuki ; Shimoyama, Kazuo ; Kuribayashi, Hitoshi
Author_Institution :
Fuji Electr. Holdings Co., Ltd., Matsumoto, Japan
Abstract :
A 1200V DB (Dielectric Barrier) IGBT with new surface structure and with extreme injection enhancement effect is proposed for the first time. P-base region is confined in the thin emitter layer and is almost separated electrically from drift region by the internal buried oxide layer. The new structure is electrically equivalent to the trench gate IGBT with very narrow mesa width and very wide trench width. The fabrication of the DB-IGBT does not need submicron process technology.
Keywords :
dielectric devices; insulated gate bipolar transistors; dielectric barrier IGBT; extreme injection enhancement; internal buried oxide layer; submicron process technology; surface structure; Charge carrier density; Current density; Dielectrics; Electrons; Insulated gate bipolar transistors; Manufacturing; Power semiconductor devices; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
