Title :
Design of trench termination for high voltage devices
Author :
Kamibaba, Ryu ; Takahama, Kenichi ; Omura, Ichiro
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
Trench termination technique has been attractive for high voltage power devices design with the possibilities of reducing the chip area and improves the blocking voltage to the level of ideal one, by reducing the termination length and maintaining the ideal electric field uniformity near the chip edge. The authors unveil, for the first time, that positive charges due to the holes accumulated in the trench side wall terminate the high electric field and show the robust design for the trench termination against the avalanche phenomena.
Keywords :
avalanche breakdown; power semiconductor devices; avalanche phenomena; blocking voltage; high voltage devices; high voltage power devices design; ideal electric field uniformity; robust design; termination length; trench side wall; trench termination technique; Power semiconductor devices; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X