• DocumentCode
    526071
  • Title

    Design of trench termination for high voltage devices

  • Author

    Kamibaba, Ryu ; Takahama, Kenichi ; Omura, Ichiro

  • Author_Institution
    Kyushu Inst. of Technol., Kitakyushu, Japan
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    Trench termination technique has been attractive for high voltage power devices design with the possibilities of reducing the chip area and improves the blocking voltage to the level of ideal one, by reducing the termination length and maintaining the ideal electric field uniformity near the chip edge. The authors unveil, for the first time, that positive charges due to the holes accumulated in the trench side wall terminate the high electric field and show the robust design for the trench termination against the avalanche phenomena.
  • Keywords
    avalanche breakdown; power semiconductor devices; avalanche phenomena; blocking voltage; high voltage devices; high voltage power devices design; ideal electric field uniformity; robust design; termination length; trench side wall; trench termination technique; Power semiconductor devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5544870