DocumentCode
526071
Title
Design of trench termination for high voltage devices
Author
Kamibaba, Ryu ; Takahama, Kenichi ; Omura, Ichiro
Author_Institution
Kyushu Inst. of Technol., Kitakyushu, Japan
fYear
2010
fDate
6-10 June 2010
Firstpage
107
Lastpage
110
Abstract
Trench termination technique has been attractive for high voltage power devices design with the possibilities of reducing the chip area and improves the blocking voltage to the level of ideal one, by reducing the termination length and maintaining the ideal electric field uniformity near the chip edge. The authors unveil, for the first time, that positive charges due to the holes accumulated in the trench side wall terminate the high electric field and show the robust design for the trench termination against the avalanche phenomena.
Keywords
avalanche breakdown; power semiconductor devices; avalanche phenomena; blocking voltage; high voltage devices; high voltage power devices design; ideal electric field uniformity; robust design; termination length; trench side wall; trench termination technique; Power semiconductor devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544870
Link To Document