• DocumentCode
    526074
  • Title

    A high voltage Super-Junction NLDMOS device implemented in 0.13µm SOI based Smart Power IC technology

  • Author

    Zhu, R. ; Khemka, V. ; Khan, T. ; Huang, W. ; Cheng, X. ; Hui, P. ; Ger, M. ; Rodriquez, P.

  • Author_Institution
    Freescale Semicond., Tempe, AZ, USA
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    This paper reports Super-Junction NLDMOS device implemented in Freescale´s 0.13 μm SOI based Smart Power IC technology. This SJ device can be operated at both high and low side applications without back-gate effect. It achieves breakdown voltage of 111V and Rds.on × area of 138 mΩ.mm2 with robust characteristics.
  • Keywords
    MOS integrated circuits; power integrated circuits; silicon-on-insulator; Freescale SOI; breakdown voltage; high voltage super-junction NLDMOS device; size 0.13 mum; smart power IC technology; voltage 111 V; Automotive applications; Current measurement; Fuels; Implants; Logic devices; Manufacturing; Power integrated circuits; Power semiconductor devices; Robustness; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5544882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=526074