DocumentCode :
526080
Title :
A novel 600V-LDMOS with HV-interconnection for HVIC on thick SOI
Author :
Yamaji, Masaharu ; Abe, Keisei ; Maiguma, Takeshi ; Takahashi, Hidenori ; Sumida, Hitoshi
Author_Institution :
Fuji Electr. Holdings Co. Ltd., Matsumoto, Japan
fYear :
2010
fDate :
6-10 June 2010
Firstpage :
101
Lastpage :
104
Abstract :
A novel LDMOS structure with the HV-interconnection for a 600V-HVIC on thick SOI is proposed. There are two original points in the proposed structure. One is the formation of the double floating p-layers under the HV-interconnection to prevent potential distribution in the drift from disturbing due to the HV-interconnection, and the other is a good combination between the LDMOS structure and multiple trench isolation to obtain the isolation performance over 600V. From the proposed structure the high blocking capability of the LDMOS, including both off- and on-breakdown voltages over 600V and high hot carrier instability, and the isolation performance over 1200V can be obtained successfully. This paper will show numerical and experimental results in detail.
Keywords :
electric breakdown; hot carriers; power integrated circuits; silicon-on-insulator; HVIC; LDMOS structure; V-interconnection; high hot carrier instability; isolation performance; multiple trench isolation; thick SOI; voltage 600 V; Filling; Hot carriers; Impact ionization; Impurities; Integrated circuit interconnections; Isolation technology; Power semiconductor devices; Power semiconductor switches; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
ISSN :
1943-653X
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
Type :
conf
Filename :
5544912
Link To Document :
بازگشت