Title :
Fully monolithically integrated X-band power amplifier without external matching
Author :
Meshcheriakov, Ievgenii ; Solomko, Valentyn A. ; Weger, Peter
Author_Institution :
Circuit Design, Tech. Univ. of Brandenburg, Cottbus, Germany
Abstract :
In this paper a fully monolithically integrated power amplifier for X-band is presented. The push-pull amplifier uses an on-chip transformer for input matching, an autotransformer with capacitive divider for interstage matching, and an LC-balun for output matching. It does not require any external matching circuits. The power amplifier is implemented in a 0.35 μm SiGe bipolar technology. At 10 GHz operating frequency and a supply voltage of 1.5 V the amplifier achieves maximum power added efficiency greater than 30%, gain 23 dB, and maximum output power greater than 23 dBm.
Keywords :
MMIC power amplifiers; autotransformers; baluns; bipolar MMIC; LC-balun; MMIC power amplifiers; X-band; bipolar technology; capacitive divider; frequency 10 GHz; gain 23 dB; input matching; interstage matching; monolithically integrated power amplifier; on-chip transformer; power added efficiency; push-pull amplifier; size 0.35 mum; voltage 1.5 V; Gain; Impedance; Impedance matching; Inductors; Metals; Radio frequency; Silicon germanium;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-7905-4
