DocumentCode :
527954
Title :
On the use of black silicon obtained by reactive ion etching as the hot spot of a thermoelectric generator heated by electromagnetic radiation
Author :
Nguyen, K.N. ; Basset, P. ; Marty, F. ; Richalot, E.
Author_Institution :
ESIEE Paris, Univ. Paris-Est, Paris, France
fYear :
2010
fDate :
18-21 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we study the enhancement of silicon absorbing properties while microstructuring its surface with cones of variable size and spacing. We simulate the optical reflectance of the structures with spikes of different dimensions. Then random maskless textured silicon, called “black silicon” is processed by reactive ion etching (RIE) under cryogenic temperatures. Using this process, three different black silicon substrates with micro and sub-micro spikes are obtained and are found to exhibit excellent anti-reflective behavior over the 350-1100 nm spectral range. Reflectance measurement with an integrating sphere is around 1% in the visible range.
Keywords :
cryogenics; electromagnetic waves; etching; heating; light reflection; optical variables measurement; thermoelectric conversion; black silicon; cryogenic temperatures; electromagnetic radiation; heating; hot spot; microstructuring; optical reflectance; reactive ion etching; reflectance measurement; silicon absorbing properties; spikes; thermoelectric generator; Etching; Optical surface waves; Reflectivity; Silicon; Surface texture; Surface waves; DRIE; black silicon; light trapping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-7905-4
Type :
conf
Filename :
5587158
Link To Document :
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