DocumentCode
528056
Title
InAlAs avalanche photodiodes for gated Geiger mode single photon counting
Author
Nakata, T. ; Mizuki, E. ; Tsukuda, T. ; Takahashi, S. ; Hatakeyama, H. ; Anan, T. ; Makita, K. ; Tomita, A.
Author_Institution
Nano Electron. Res. Labs., NEC Corp., Otsu, Japan
fYear
2010
fDate
5-9 July 2010
Firstpage
822
Lastpage
823
Abstract
InAlAs-APDs were developed and characterized its detection performances for single photon counting. We succeed to improve the signal-to-noise ratio not only by the crystal quality but also by the multiplication layer design.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; photon counting; APD; InAlAs; avalanche photodiodes; crystal quality; detection performances; gated Geiger mode single-photon counting; multiplication layer design; signal-to-noise ratio; Avalanche photodiodes; Crystals; Indium compounds; Logic gates; Performance evaluation; Photonics; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location
Sapporo
Print_ISBN
978-1-4244-6785-3
Type
conf
Filename
5588002
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