• DocumentCode
    528111
  • Title

    25.8-Gbps direct modulation of 1.3-μm-wavelength AlGalnAs distributed reflector lasers

  • Author

    Otsubo, K. ; Matsuda, M. ; Uetake, A. ; Okumura, S. ; Tomabechi, S. ; Ekawa, M. ; Yamamoto, T.

  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    53
  • Lastpage
    55
  • Abstract
    AlGaInAs distributed-reflector lasers with 4 different wavelengths on LAN-WDM grid were fabricated using the same MQW active layers. These lasers provided output power of over 10 mW and clear eye-opening under 25.8-Gbps direct modulation at 50C.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; optical fibre LAN; semiconductor lasers; wavelength division multiplexing; AlGaInAs; LAN-WDM; MQW active layers; bit rate 25.8 Gbit/s; distributed reflector lasers; eye-opening; temperature 50 degC; wavelength 1.3 mum; Fiber lasers; Modulation; Optical waveguides; Power lasers; Quantum well devices; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference (OECC), 2010 15th
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-6785-3
  • Type

    conf

  • Filename
    5588228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=528111