Empirical model including band-to-band Coulomb interaction for refractive index spectra of quaternary semiconductors

Author

Lin, E.Y. ; Lay, T.S.

Author_Institution

Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2010

fDate

5-9 July 2010

Firstpage

670

Lastpage

671

Abstract

The refractive indices of (Al_0.48In_0.52As)_z(Ga_0.47In_0.53As)_1-z, and Ga_xIn_1-xAs_yP_1-y quaternary materials is presented from a model that takes into account of band-to-band Coulomb interaction and Urbach broadening. We apply an accurate absorption model to calculate the contribution near band-edge region by a complete closed-form Kramers-Kronig transform. A Sellmeier-type single-oscillator model includes all the additional absorption at higher energies.

Keywords

Kramers-Kronig relations; absorption coefficients; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical materials; refractive index; semiconductor materials; (Al_0.48In_0.52As)_z(Ga_0.47In_0.53As)_1-z; Ga_xIn_1-xAs_yP_1-y; Sellmeier-type single oscillator model; Urbach broadening; accurate absorption model; band-to-band Coulomb interaction; closed form Kramers-Kronig transform; near band-edge region; quaternary materials; quaternary semiconductors; refractive index spectra; Absorption; Biological system modeling; Data models; Materials; Photonic band gap; Photonics; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

OptoElectronics and Communications Conference (OECC), 2010 15th

Conference_Location

Sapporo

Print_ISBN

978-1-4244-6785-3

Type

conf

Filename

5588377