• DocumentCode
    528212
  • Title

    Improvement the light extraction efficiencies with patterned sapphire substrates by wet and ICP etching method

  • Author

    Wu, Chan-Shou ; Liang, Tsair-Chun ; Cheng, Wei-Chih ; Huang, Shun-Yuan ; Kuan, Hon

  • Author_Institution
    Grad. Inst. of Electro-Opt. Eng., Nat. Kaohsiung First Univ. of Sci. & Technol., Kaohsiung, Taiwan
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    676
  • Lastpage
    677
  • Abstract
    In this study, sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). The light output power of LEDs on ICP-etching patterned substrates was better than the LED on wet-etching patterned substrates about 17%.
  • Keywords
    optoelectronic devices; sapphire; sputter etching; substrates; wetting; Al2O3; ICP etching method; etching technique; inductively coupled plasma; light extraction; light-emitting diodes; patterned sapphire substrates; wet etching; Etching; Iterative closest point algorithm; Light emitting diodes; Power generation; Resists; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference (OECC), 2010 15th
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-6785-3
  • Type

    conf

  • Filename
    5588383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=528212