Title :
Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators
Author :
Iseri, Y. ; Yamada, H. ; Arakawa, T. ; Tada, K. ; Haneji, N.
Author_Institution :
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama, Japan
Abstract :
A Ge/SiGe coupled quantum well for optical modulators based on phase modulation was proposed and its electrorefractive characteristics are theoretically analyzed using the K·p perturbation theory. This structure is promising for low-voltage Mach Zehnder modulators.
Keywords :
Ge-Si alloys; Mach-Zehnder interferometers; electro-optical effects; electro-optical modulation; germanium; perturbation theory; phase modulation; semiconductor quantum wells; Ge-SiGe; K·p perturbation theory; coupled quantum well; electrorefractive effect; low-voltage Mach Zehnder modulators; phase modulation; silicon based optical modulators; Absorption; Electric fields; High speed optical techniques; Optical modulation; Phase modulation; Silicon; Silicon germanium;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
