• DocumentCode
    528312
  • Title

    Linearity of carrier depletion based silicon optical modulators

  • Author

    Lo, Stanley M G ; Li, C. ; Tsang, H.K.

  • Author_Institution
    Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    514
  • Lastpage
    515
  • Abstract
    We consider theoretically the linearity of silicon modulators. The reversed-biased modulation of hole concentration in silicon modulators can give 4.6dB improvement in Spurious Free Dynamic Range over conventional (linear electro-optic effect) III-V or LiNbO3 modulators.
  • Keywords
    electro-optical effects; optical modulation; silicon; carrier depletion; electro-optic effect; hole concentration; reversed-biased modulation; silicon optical modulators; spurious free dynamic range; Linearity; Nonlinear optics; Optical interferometry; Optical modulation; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference (OECC), 2010 15th
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-6785-3
  • Type

    conf

  • Filename
    5588504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=528312